The Study on Characteristics of N-Doped Ethylcyclohexane Plasma-Polymer Thin Films

  • Seo, Hyeon-Jin (Department of Chemistry, Sungkyunkwan University) ;
  • Jo, Sang-Jin (Department of Chemistry, Sungkyunkwan University) ;
  • Lee, Jin-U (Department of Chemistry, Sungkyunkwan University) ;
  • Jeon, So-Hyeon (Department of Chemistry, Sungkyunkwan University) ;
  • Bu, Jin-Hyo (Department of Chemistry, Sungkyunkwan University)
  • Published : 2013.02.18

Abstract

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped ethylcyclohexane plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Ethylcyclohexenewas used as organic precursor (carbon source) with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. The ellipsometry results showed the refractive index change of the N-doped ethylcyclohexene plasma polymer film. The FT-IR spectrashowed that the N-doped ethylcyclohexene plasma polymer films were completely fragmented and polymerized from ethylcyclohexane.