Development and Application of Group IV Transition Metal Oxide Precursors

  • Kim, Da Hye (Thin Film Materials Research Group, Korea Research Institute of Chemical Technology) ;
  • Park, Bo Keun (Thin Film Materials Research Group, Korea Research Institute of Chemical Technology) ;
  • Jeone, Dong Ju (Thin Film Materials Research Group, Korea Research Institute of Chemical Technology) ;
  • Kim, Chang Gyoun (Thin Film Materials Research Group, Korea Research Institute of Chemical Technology) ;
  • Son, Seung Uk (Department of Chemistry and Department of Energy Science, Sunkyunkwan University) ;
  • Chung, Taek-Mo (Thin Film Materials Research Group, Korea Research Institute of Chemical Technology)
  • Published : 2014.02.10

Abstract

The oxides of group IV transition metals such as titanium, zirconium, hafnium have many important current and future application, including protective coatings, sensors and dielectric layers in thin film electroluminescent (TFEL) devices. Recently, group IV transition metal oxide films have been intensively investigated as replacements for SiO2. Due to high permittivities (k~14-25) compared with SiO2 (k~3.9), large band-gaps, large band offsets and high thermodynamic stability on silicon. Herein, we report the synthesis of new group IV transition metal complexes as useful precursors to deposit their oxide thin films using chemical vapor deposition technique. The complexes were characterized by FT-IR, 1H NMR, 13C NMR and thermogravimetric analysis (TGA). Newly synthesised compounds show high volatility and thermal stability, so we are trying to deposit metal oxide thin films using the complexes by Atomic Layer Deposition (ALD).