The Development of Microstructure in $Si_3N_4$-Bonded SiC Refractory

$Si_3N_4$ 결합 SiC 내화재료에 있어서 생성된 $Si_3N_4$의 미구조 변화

  • 최덕균 (한국과학기술원 요업재료연구실) ;
  • 이준근 (한국과학기술원 요업재료연구실)
  • Published : 1982.02.01


This paper deals with the $Si_3N_4$-bonded SiC refractory in terms of its microstructure development during nitridation. When mixture of SiC grains and fine Si power is fired under nitrogen atmosphere, an interlocking network of $Si_3N_4$ whiskers is formed by nitridation of Si. It is found that the strength of $Si_3N_4$-bonded SiC refractory is soley due to the physical nature of this interlocking whiskers. At the initial stage of nitridation, $Si_3N_4$ whisker forms in very thin and long shape and, with further nitridation, it becomes thicker with diameters up to 0.35$\mu\textrm{m}$. It is found that the mechanical strength of $Si_3N_4$-bonded SiC refractory depends on the degree of nitridation and the development of microstructure.



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