Growth of Sapphire Crystals by Verneuil Method

Verneuil법에 의한 Sapphire단결정 성장

  • Joo, K. (Dept. of Inorganic Materials Eng., Hanyang University) ;
  • Bae, S.Y. (Dept. of Inorganic Materials Eng., Hanyang University) ;
  • Choi, J.K. (Dept. of Inorganic Materials Eng., Hanyang University) ;
  • Orr, K.K. (Dept. of Inorganic Materials Eng., Hanyang University) ;
  • Son, S.K. (Tech. Research Institute, Namsung Ceramic Co) ;
  • Beun, Y.J. (Tech. Research Institute, Namsung Ceramic Co) ;
  • Chun, H.T. (Tech. Research Institute, Namsung Ceramic Co)
  • 주경 (한양대학교 무기재료공학과) ;
  • 배상열 (한양대학교 무기재료공학과) ;
  • 최종건 (한양대학교 무기재료공학과) ;
  • 오근호 (한양대학교 무기재료공학과) ;
  • 손선기 (남성세라믹-기술연구소) ;
  • 변영재 (남성세라믹-기술연구소) ;
  • 전형탁 (남성세라믹-기술연구소)
  • Published : 1988.05.01

Abstract

Verneuil method uses oxyhydrogen flame for its heat source. This method was used to grow corundum monocrystals. Parametersof this method are feeding rate, gas pressure, lowering rate and growth axis. These parameters were examined. Crystals's qualities and shapes are affected by these parameters. Crystals having good qualities and shape were grown under the conditions that feeding rate, 0.2∼0.5g/min, lowering rate, 10∼20mm/hr ; gas pressure, 3∼4psi ; growth axis was shifted 60 degrees from c axis.

Keywords

References

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