The Growth of Defects $ZnWO_4$ Single Crystals

$ZnWO_4$ 단결정 성장과 결함

  • 조병곤 (한양대학교 무기재료공학과) ;
  • 오근호 (한양대학교 무기재료공학과)
  • Published : 1990.04.01

Abstract

ZnWO4 single crystals were grown by Czochralski method. And the orientation of grown crystals were determined by Laue back reflection, and the crystals were siliced at (100), (010), (001) face before polishing. The morphologys and distribution of etch pits on each face were observed by optical microscopy. In the present study, we understood that dislocation distributjioon rely on shape of solid-liquid interface, and secondary phase acts on the dislocation source. We also observed dislocation trace(etch pits) of (100) slip plane on (010) cleavage plane.

Keywords

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