Diamond Film Deposition by Microwave Plasma CVD Using a Mixture of $CH_4$, $H_2$, $O_2$,

마이크로웨이브 플라즈마 화학증착법에 의해 메탄, 수소, 산소의 혼합가스로부터 다이아몬드 박막의 합성

  • 이길용 (포항공과대학 재료금속공학과) ;
  • 제정호 (포항공과대학 재료금속공학과)
  • Published : 1990.04.01

Abstract

Diamond film was deposited on Si wafer substrate from a gas mixture of methane, hydrogen and oxygen by microwave plasma-assisted chemical vapor deposition. The effects of the pre-treatments of the substrate and of the oxygen addition on the diamond film synthesis are described. In order to obtain diamond film, the substrate was pre-treated with 3 kinds of methods. When the substrate was ultrasonically vibrated within the ethyl alcohol dispersed with 25${\mu}{\textrm}{m}$ diamond powder, the denset diamond film was deposited. Addition of oxygen in the gas mixture of methane and hydrogen improved the crystallinity of the deposited diamond film and also increased the deposition rate of the diamond film more than two times.

Keywords

References

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