Thermodynamic Calculations of High Temperature Bubble Formation at SiC/$SiO_2$ Interface

SiC/$SiO_2$ 계면의 고온 기공발생에 관한 열역학적 계산

  • 이문희 (수원대학교 전자재료과) ;
  • 박종욱 (한국과학기술원 과학기술대학 전자재료과)
  • Published : 1990.04.01


Numerous researchers have observed the bubble fromation at SiC/SiO2 interface from 130$0^{\circ}C$ to 1$700^{\circ}C$. According to thermodynamic calculation, the bubble could be formed from the microscopic impurities which result from the chemical vapor deposition of SiC. When C-impurity is present at the interface, it is calculated that the bubble is formed at 1511$^{\circ}C$ and when Si is present, the bubble is formed at 177$0^{\circ}C$. These results are very close to the prior observations, but the calculation can not explain the observation of bubble below 150$0^{\circ}C$.



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