Micro Raman Spectroscopic Analysis of Local Stress on Silicon Surface in Semiconductor Fabrication Process

반도체 제조 공정에서 실리콘 표면에 유입된 Stress의 마이크로 Raman 분광분석

  • Son, Min Young (Technology Assurance Team, Manufacturing Engineering Center, Semiconductor Business, Sam Sung Electronics) ;
  • Jung, Jae Kyung (Technology Assurance Team, Manufacturing Engineering Center, Semiconductor Business, Sam Sung Electronics) ;
  • Park, Jin Seong (Technology Assurance Team, Manufacturing Engineering Center, Semiconductor Business, Sam Sung Electronics) ;
  • Kang, Sung Chul (Technology Assurance Team, Manufacturing Engineering Center, Semiconductor Business, Sam Sung Electronics)
  • 손민영 (삼성전자 반도체 생산기술센타 분석기술팀) ;
  • 정재경 (삼성전자 반도체 생산기술센타 분석기술팀) ;
  • 박진성 (삼성전자 반도체 생산기술센타 분석기술팀) ;
  • 강성철 (삼성전자 반도체 생산기술센타 분석기술팀)
  • Received : 1992.09.28
  • Published : 1992.12.25

Abstract

Using micro-Raman spectrometer, we investigated the evaluation of microstress on silicon surface after the local thermal oxidation. The induced stress of silicon surface after local thermal oxidation shows maximum value at the interface of silicon oxide and active area. The smaller the size of active area, the larger stress. From the evaluation of three other device isolation processes, A, B and moB, whose active size has $0.45{\mu}m$ in length, moB process is turned out to have the lowest stress value and the smallest bird's beak effect.

Keywords

microstress on silicon surface;micro-Raman spectrometry