Fourier Transform Infrared Spectroscopic Analysis of the Silylated Resist on Silicon Wafers in Semiconductor Lithographic Process

반도체 사진공정에서 실리콘 웨이퍼 위의 Silylated Resist의 Fourier 변환 적외선 분광분석

  • Kang, Sung Chul (Technology Assurenance dept., Manufacturing Engineering Center, semiconductor Business, Samsung Electronics) ;
  • Kim, Su Jong (Technology Assurenance dept., Manufacturing Engineering Center, semiconductor Business, Samsung Electronics) ;
  • Son, Min Young (Technology Assurenance dept., Manufacturing Engineering Center, semiconductor Business, Samsung Electronics) ;
  • Park, Chun Geun (Technology Assurenance dept., Manufacturing Engineering Center, semiconductor Business, Samsung Electronics)
  • 강성철 (삼성전자 반도체 생산기술센타 분석기술팀) ;
  • 김수종 (삼성전자 반도체 생산기술센타 분석기술팀) ;
  • 손민영 (삼성전자 반도체 생산기술센타 분석기술팀) ;
  • 박춘근 (삼성전자 반도체 생산기술센타 분석기술팀)
  • Published : 1992.12.25

Abstract

Using FT-IR, we determined the depth of silylated layers produced from various gas-phase-silylation conditions was proposed by using Fourier Transform Infrared (FT-IR) spectroscopic analysis. The depth of silylated layer was determined from absorbance measurments of the significant peaks (Si-O-ph, Si-C, Si-H) of FT-IR spectra with background spectrum subtraction method. And the results were compared with thickness measurments of SEM. The results were well agree with SEM. It found to be well suited for determining silylation process window.