Fourier Transform Infrared Spectroscopic Analysis of the Silylated Resist on Silicon Wafers in Semiconductor Lithographic Process

반도체 사진공정에서 실리콘 웨이퍼 위의 Silylated Resist의 Fourier 변환 적외선 분광분석

  • Published : 1992.12.25

Abstract

Using FT-IR, we determined the depth of silylated layers produced from various gas-phase-silylation conditions was proposed by using Fourier Transform Infrared (FT-IR) spectroscopic analysis. The depth of silylated layer was determined from absorbance measurments of the significant peaks (Si-O-ph, Si-C, Si-H) of FT-IR spectra with background spectrum subtraction method. And the results were compared with thickness measurments of SEM. The results were well agree with SEM. It found to be well suited for determining silylation process window.

Keywords

silylation;FT-IR;gas phase silylation