Low Pressure Chemical Vapor Deposition of Silicon Carbide

탄화규소의 저압 화학증착

  • 송진수 (한국과학기술연구원 세라믹스연구부) ;
  • 김영욱 (한국과학기술연구원 세라믹스연구부) ;
  • 김동주 (연세대학교 세라믹공학과) ;
  • 최두진 (연세대학교 세라믹공학과) ;
  • 이준근 (한국과학기술연구원 세라믹스연구부)
  • Published : 1994.03.01

Abstract

The objectives of this study were to develop the low pressure chemical vapor deposition(LPCVD) process of SiC and to fabricate pure and dense SiC layer onto graphite substrate at low temperature. The deposition experiments were performed using the MTS-H2 system (30 torr) in the deposition temperature ranging from 100$0^{\circ}C$ to 120$0^{\circ}C$. The deposition rate of SiC was increased with the temperature. The rate controlling step can be classified from calculated results of the apparent thermal activation energy as follows; surface reaction below 110$0^{\circ}C$ and gas phase diffusion through a stagnant layer over 110$0^{\circ}C$. The deposited layer was $\beta$-SiC with a preferred orientation of (111) and the strongly faceted SiC deposits were observed over 115$0^{\circ}C$.

Keywords

References

  1. J. Cryst. Growth v.12 On the Formation of β-SiC from Pyrolysis of CH₃SiCl₃in Hydrogen A.W.C. Van Kemenade;C.F. Stemfoort
  2. J.Am.Ceram.Soc. v.66 no.8 Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Carbide A.I. Kingon;L.J. Lutz;P. Liaw;R.F. Davis
  3. Thin Film Phenomena K.L. Chopra
  4. Thin Solid Films v.40 The Structure of Chemical Vapor Deposited Silicon Carbide J. Chin;P.K. Gantzel;R.G. Hudson
  5. J.Am.Ceram.Soc. v.75 no.9 Composition and Mechanical Properties of rf-Sputtered Amorphous Silicon Carbide Coating J.S. Huang;M. Ohland;W.S. Williams
  6. Inorg Chem. v.2 no.4 Alkoxychlorosilanes and Alkoxysilanes Containing Silane Hydrogen O.J. Keljnot
  7. SiC Ceramics Silicon Carbide Prepared by Chemical Vapor Deposition T. Hirai;M. Sasaki
  8. J. Electrochem. Soc. v.134 no.12 Growth Characteristics of CVD Beta-Silicon Carbide D.J. Cheng;W.J. Shyy;D.H. Kuo;M.H. Hon
  9. Solid State Technol v.20 no.4 Low Pressure CVD Production Processes for Poly,Nitride,and Oxide Rosler
  10. J. Am. Ceram. Soc. v.51 no.8 Deposition and Microstructure of Vapor-Deposited Silicon Carbide T.D. Gulden
  11. Silicon Carbide Theoretical and Practical Aspects of Silicon Carbide I.N. Frantsevich;I.N. Frantsevich(ed.)
  12. JANAF Thermochemical Tables(2nd ed.). Natl.Stand.Ref.Data.Ser.(U.S.Natl Bur.Stand) no.37
  13. J. Am. Ceram. Soc. v.68 no.4 Thermodynamic Analysis and Kinetic Implication of Chemical Vapor Deposition of Sic from Si-C-Cl-H Gas Systems G.S. Fischman;W.T. Petuskey
  14. Deposition Technologies for Films and Coatings R.F. Bunshah
  15. the Proc.of International Symposium on Ceramic Components for Engine, Japan Preparation and Mechanical Properties of CVD-SiC K. Niihara;A. Suda;T. Hirai
  16. Thin Films by Chemical Vapor Deposition C.E. Morosanu
  17. J.Metal v.28 no.6 Chemical Vapor Deposition of Structural Ceramic Materials J.E. Doherty
  18. J. Mater. Sci. Lett v.5 Chemical Vapour Deposition of SiC and Some of its Properties S. Motojima;H. Yagi;N. Iwamori
  19. J. Electrochem. Soc. v.118 no.4 The Role of Homogeneous Reactions in Chemical Vapor Deposition K.J. Sladek
  20. Powder Metall.Int. continued in v.12 no.3;4 Review 13: Chemical Vapor Deposition of Silicon Carbide J. Schlichting
  21. Ceram.Bull. v.67 no.2 Advanced Ceramics by Chemical Vapor Deposition Techniques D.P.Stinton;T.M.Besmann;R.A.Lowden