Low Pressure Chemical Vapor Deposition of Silicon Carbide

탄화규소의 저압 화학증착

  • 송진수 (한국과학기술연구원 세라믹스연구부) ;
  • 김영욱 (한국과학기술연구원 세라믹스연구부) ;
  • 김동주 (연세대학교 세라믹공학과) ;
  • 최두진 (연세대학교 세라믹공학과) ;
  • 이준근 (한국과학기술연구원 세라믹스연구부)
  • Published : 1994.03.01


The objectives of this study were to develop the low pressure chemical vapor deposition(LPCVD) process of SiC and to fabricate pure and dense SiC layer onto graphite substrate at low temperature. The deposition experiments were performed using the MTS-H2 system (30 torr) in the deposition temperature ranging from 100$0^{\circ}C$ to 120$0^{\circ}C$. The deposition rate of SiC was increased with the temperature. The rate controlling step can be classified from calculated results of the apparent thermal activation energy as follows; surface reaction below 110$0^{\circ}C$ and gas phase diffusion through a stagnant layer over 110$0^{\circ}C$. The deposited layer was $\beta$-SiC with a preferred orientation of (111) and the strongly faceted SiC deposits were observed over 115$0^{\circ}C$.



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