Preparation of Yttria Stabilized zirconia Films by the Electrochemical Vapor Deposition

전기화학증착에 의한 이트리아 안정화 지르코니아 박막의 제조

  • 정지원 (경북대학교 공과대학 금속공학과) ;
  • 박동원 (경북대학교 공과대학 금속공학과) ;
  • 전치훈 (경북대학교 공과대학 금속공학과) ;
  • 최병진 (경북대학교 공과대학 금속공학과) ;
  • 김대룡 (경북대학교 공과대학 금속공학과)
  • Published : 1994.05.01


The yttria stabilized zirconia(YSZ) thin films for solid oxide fuel cell (SOFC) were fabricated by an electrochemical vapor deposition(EVD) technique using YCl3+ZrCl4+H2O gas system. The YSZ films were deposited under reduced pressure at the temperature of 1000~120$0^{\circ}C$ on the porous alumina substrates. The deposition rate, chemical composition and growth morphology were investigated by SEM, XRD, EDS. The growth rates of the films obeyed a parabolic rate law, representing that the growing process is controlled by an electrochemical transport through the YSZ film. The Y2O3 content of the films was about 10 mol%, equal to the composition of metal chloride reactant gases, approximately. The YSZ films were highly dense, the growing features showed columnar structure and surface morphologies were changed with the EVD conditions.



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