Evaluation of Grain Boundary Property in Oxide Ceramics by Isothermal Capacitance Trasient Spectroscopy

ICTS법을 이용한 산화물 세라믹스에서의 입계물성평가

  • 김명철 (군산대학교 공과대학 재료공학과) ;
  • 한응학 (쌍용 중앙연구소) ;
  • 강영석 (서울대학교 공과대학 무기재료공학과) ;
  • 박순자 (서울대학교 공과대학 무기재료공학과)
  • Published : 1994.05.01

Abstract

The principle of the Isothermal Capacitance Transient Spectroscopy[ICTS] were explained to measure the electronic trap levels in oxide ceramics. The measurement apparatus and the theory of the ICTS were described in detail. The trap energy evaluation was performed for the ZnO varistor and BaTiO3 ceramics. The grain boundary interface trap levels were detected at -5$0^{\circ}C$~6$0^{\circ}C$ in the case of ZnO varistor and PTCR samples, and the bulk trap levels were detected at 2$0^{\circ}C$~60~ in BaTiO3. The trap energy levels of the above samples could be directly determined by ICTS measurement.

Keywords

References

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