Evaluation of Grain Boundary Property in Oxide Ceramics by Isothermal Capacitance Trasient Spectroscopy

ICTS법을 이용한 산화물 세라믹스에서의 입계물성평가

  • 김명철 (군산대학교 공과대학 재료공학과) ;
  • 한응학 (쌍용 중앙연구소) ;
  • 강영석 (서울대학교 공과대학 무기재료공학과) ;
  • 박순자 (서울대학교 공과대학 무기재료공학과)
  • Published : 1994.05.01


The principle of the Isothermal Capacitance Transient Spectroscopy[ICTS] were explained to measure the electronic trap levels in oxide ceramics. The measurement apparatus and the theory of the ICTS were described in detail. The trap energy evaluation was performed for the ZnO varistor and BaTiO3 ceramics. The grain boundary interface trap levels were detected at -5$0^{\circ}C$~6$0^{\circ}C$ in the case of ZnO varistor and PTCR samples, and the bulk trap levels were detected at 2$0^{\circ}C$~60~ in BaTiO3. The trap energy levels of the above samples could be directly determined by ICTS measurement.



  1. J. Appl. Phys v.45 no.7 Deep Level Transient Spectroscopy;A New Method to Charaterize Traps in Semiconductors D.V. Lang
  2. New Ceramics v.7 Grain Boundaries of Electroceramics-Application of ICTS Technique C. Akita;S. Tanaka;J. Tanaka
  3. J. Mat Sci. Lett. Evaluation of Deep Trap Levels in Manganese Doped PTCR Ceramics by Isothermal Capacitance Transient Spectroscopy E. H. Han;M.C. Kim;S.J. Park
  4. Solid-State Electron v.3 no.1 Barium Titanate as Semiconductor with Blocking Layers W. Heywang
  5. Ferroelectrics Grain Boundary Trap Levels in (Ba₁Sr)TiO₃-based PTCR Ceramics M.C. Kim;S.H. Hur;S.J. Park
  6. J. Mat. Res ICTS Study in Polycrystalline SnO₂ Ceramics M.C. Kim;S.H. Song;S.J. Park
  7. J. Appl Phys v.63 no.9 The Effect Mn on the Positive Temperature Coefficient of Resistance Characteristics of Doner Doped BaTiO₃ Ceramics H.M. Al-Allak;A.W. Brinkman;G.J. Russel;J Woods
  8. Nippon Seramikusu Kyokai Gakujtsu Ronbunshi v.97 no.10 Detection and Characterization of Trap Centers in ZnO Varistor by ICTS T. Maeda;M. Takata
  9. J. Am Ceram. Soc. v.74 no.10 Isothermal Capacitance Transient Spectroscopy of Grain Boundary Interface States in Beryllium Oxide-Doped Silicon Carbide Ceramics S. Tanaka;K.Takahashi;Y. Suzuki;C. Akita;N. Oha-shi;H. Haneda;J. Tanaka
  10. American Ceramic Society Bulletin v.72 no.5 Relationship between Degradation Phenomenon and Trap Levels in a ZnO Varistor T. Maeda;M. Takata
  11. J. Ceram. Soc. Japan v.100 no.10 Characterization of Interface States in ZnO Varistors using Isothermal Capacitance Transient Spectroscopy K. Tsuda;K.Mukae
  12. Advances in Ceramics(Vol.1, Grain Boundary Phenomena in Electronic Ceramics) PTC Materials Technology, 1955-1980 B. Kulwick;L.M. Levinson(ed.);D.C. Hill(ed.)
  13. Nippon Seramikusu Kyokai Gakujutsu Ronbunshi v.97 no.10 Characterization of the Interface States in ZnO Varistors by DLTS Method K. Tsuda;K. Mukae
  14. Electrochemical Laboratory Reserch Report No.867 Localized States in Semiconductors studied by Isothermal Cpacitance Transient Spectroscopy H. Okushi
  15. American Ceramic Society Bulletin v.68 no.4 Advances in Varistor Technology L.M. Levinson
  16. Ph.D. Thesis Evaluation of Grain Boundary Trap Levels in Mn-doped PTC Ceramics by ICTS E.H. Han
  17. Ger. Pat. No. 929350 Method of Preparation of Semiconducting Materials P.W. Haaijman;R.W Dam;H.A. Klassens
  18. Solid-State Electron v.7 Some Aspects of Semiconducting Barium Titanate G.H. Jonker