A Study on Energy Band Change and Stability in Photoelectrolysis by Use of Titanium Oxide Films on Ti-Bi Alloy

Ti-Bi 합금 위에 형성된 산화티타늄 피막의 광 전기분해시 에너지밴드와 안정성에 관한 연구

  • 박성용 (한국과학기술연구원 화공연구부) ;
  • 조병원 (한국과학기술연구원 화공연구부) ;
  • 윤경석 (한국과학기술연구원 화공연구부)
  • Published : 1994.06.30


Ti-Bi alloy was prepared by arc melting of appropriate amounts of titanium and bismuth powder. The photocurrent($I_{ph}$) of Ti-Bi oxide electrode was increased with the increase of Bi content, up to 10wt%. The maximum $I_{ph}$ showed $7.6mA/cm^2$ at V=0.5V vs. SCE. The band gap energy of Ti-Bi oxide electrode was observed to 3.0~2.87eV. Surface barrier($V_s$) of Ti-10Bi oxide electrode showed maximum value(1.08V) but didn't exceed 1.23V, then it was impossible to run $H_2$ generation without any other energy sources other than the light. Ti-Bi oxide electrode was found to be quite stable under alkaline solution and showed no signs of photodecomposition.