Microwave Dielectric Properties of $(Zr_{1-x}Sn_x)TiO_4$ Ceramics in the Response Surface Methodology

반응표면분석법에 의한 $(Zr_{1-x}Sn_x)TiO_4$계 교주파 유전 특성

  • Kim, Wang-Sup (Ceramin Processing Center, Korea Institute of Science and Technology) ;
  • Choi, Hwan (Ceramin Processing Center, Korea Institute of Science and Technology) ;
  • Moon, Myoung-Lib (Ceramin Processing Center, Korea Institute of Science and Technology) ;
  • Kim, Kyung-Yong (Ceramin Processing Center, Korea Institute of Science and Technology)
  • 김왕성 (한국과학기술연구원, 세라믹 공정센터) ;
  • 최환 (한국과학기술연구원, 세라믹 공정센터) ;
  • 문명립 (한국과학기술연구원, 세라믹 공정센터) ;
  • 김경용 (한국과학기술연구원, 세라믹 공정센터)
  • Published : 1995.05.01

Abstract

The effect of sintering temperature, sintering time and forming pressure on microwave dielectric properties of (Zr1-xSnx)TiO4 ceramics containing 1.0wt% B2O3, 0.3 wt% La2O3 and 1.0wt% NiTa2O6 was investigated using the response surface methodology. The optimum values of processing variables were determined based on the reproducibility. The optimum values of the dielectric constant of >35. Q.f0 of >55000 and $\tau$f=$\pm$5 ppm/$^{\circ}C$ could be obtained when the sample was pressed at 500~600kg/$\textrm{cm}^2$ and sintered at 1500~155$0^{\circ}C$ for 2~3 hrs.

Keywords

$(Zr_{1-x}Sn_x)TiO_4$;Sintering additive;Processing variables;Microwave dielectric properties;Response surface methodology

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