A Study on the Photoluminescence of Porous Si

다공성 실리콘의 발광에 관한 연구

  • Kim, Seok (Dept. of Ceramic Eng., Yonsei University) ;
  • Choi, Doo-Jin (Dept. of Ceramic Eng., Yonsei University) ;
  • Yoon, Young-Soo (Devision of Ceramics, Korean Institute of Science and Technology) ;
  • Yang, Doo-Young (LG Semiconductor Co. LTD) ;
  • Kim, Woo-Shik (LG Semiconductor Co. LTD)
  • 김석 (연세대학교 세라믹공학과) ;
  • 최두진 (연세대학교 세라믹공학과) ;
  • 윤영수 (한국과학기술연구원 세라믹스부) ;
  • 양두영 (LG 반도체) ;
  • 김우식 (LG 반도체)
  • Published : 1995.05.01


Porous silicon (PS) was prepared under different anodization conditions and the photoluminescence (PL) was measrued. In addition PL of the naturally and thermally oxidized PS was measured. It was found that the PL peak was shifted to shorter wavelength as the anodization current density and the extent of the oxidation increased. The absence of correlation between the PL behavior and the surface hydrogen species (Si-H2, Si-H) implies that the mechanism of PL of PS is not likely related to the surface hydrogen species effect but to the quantum confinement effect.


Anodization;Porous silicon;Photoluminescence;Quantum confinement effect


  1. Solid State Electronic Devices(3rd ed.) B.G. Streetman
  2. J. Appl. Phys. v.52 no.6 Photoluminescence in the amorphous system $SiO_x$ R. Carius;R. Fischer;E. Holzenkampfer;J. Stuke
  3. Appl. Phys. Lett v.42 no.4 Efficient visible photoluminescence in the binary α-Si:H? alloy system D.J. Wolford;J.A. Reimer;B.A. Scott
  4. Appl. Phys. Lett. v.59 no.25 Intense photoluminescence from laterally anodized porous silicon K.H. Jung;S. Shih;T.Y. Hsieh;D.L. Kwong;L.T. Lin
  5. 센서학회지 v.1 no.1 HF 양극반응을 이용한 단결정 실리콘 미세구조의 제조 조찬섭;심준환;이석수;이종현
  6. Appl. Phys. Lett. v.46 no.1 Microstructure and formation mechanism of porous silicon M.I.J. Beale;N.G. Chew;M.J. Uren;A.G. Cullis;J.D. Benjamin
  7. Appl Phys. Lett. v.60 no.19 Microstructural investigations of light-emitting porous Si layer T. George;M.S. Anderson;W.T. Pike;T.L. Lin;R.W. Fathauer;K.H. Jung;D.L. Kwong
  8. Philos. Mag. v.B44 no.137 Photoluminescence and optical properties of plasma-deposited amorphous $Si_x C_{1-x}x$ alloys R.S. Sussman;R. Ogden
  9. Appl. Phys. Lett. v.51 no.19 1.3μm light-emitting diode from silicon electron irradiated at its damage threshold L.T. Canham;K.G. Barraclough;D.J. Robbins
  10. Phys. Rev. Lett. v.54 Strain-induced two-dimensional electron gas in selectively doped S₁/$Si_x Ge_{1-x}$ superlattices G. Abstreiter;H. Brugger;T. Wolf
  11. Appl. Phys. Lett. v.57 no.10 Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers L.T. Canham
  12. Jpn. J. Appl. Phys. v.29 no.2 Structural change of crystalline porous silicon with chemisorption T. Ito;T. Yasumatsu;H. Watabe;A. Hiraki
  13. Appl. Phys. Lett. v.60 no.14 Correlation between silicon hydride species and the photoluminescence intensity of porous silicon C. Tsai;K.H. Li;D.S. Kinosky;R.Z. Qian;T.C. Hsu;J.T. Irby;S.K. Banerjee;A.F. Tasch;J.C. Campbell;B.K. Hance;J.M. White
  14. Appl. Phys v.A53 no.1 Properties of silicon-electrolyte junctions and their application to silicon charaterization H. Foll
  15. Transmission Electron Microscopy of Materials G. Thomas;M.J. Goringe
  16. J. Appl. Phys. v.72 no.8 The photoluminescence spectra of porous silicon boiled in water K.H. Li;C. Tsai;S. Shih;T. Hsu;D.L. Kwong;J.C. Campbell
  17. Bell syst. Tech. J. v.35 no.333 Electrolytic shaping of germanium and silicon A. Uhlir
  18. Phys. Rev. v.A39 no.10 Generalized model for the diffusion-limited aggregation and Eden models of cluster growth R.L. Smith;S.D. Collins
  19. Nature v.353 no.335 Visible light emission due to quantum size effects in highly porous crystalline silicon A.G. Cullis;L.T. Canham
  20. Appl. Phys. Lett. v.58 no.8 Porous silicon formation: A quantum wire effect V. Lehmann;U. Gosele
  21. Thin Solid Films v.125 no.1/2 Optical properties of porous silicon films C. Pickering;M.I.J. Beale;D.J. Robbins;P.J. Pearson;R. Greef
  22. J. Appl. Phys. v.70 no.1 Atmospheric impregnation of porous silicon at room temperature L.T. Canham;M.R. Houlton;W.Y. Leong;C. Pickering;J.M. Keen
  23. Appl. Phys. Lett. v.32 no.12 Photoluminescence recovery in rehydrogenated amorphous silicon J.I. Pankove
  24. J. Electron Mater v.17 no.533 A theoretical model of the morphologies of porous silicon R.L. Smith;S.F. Chuang;S.D. Collins
  25. Appl. Phys. Lett. v.57 no.10 Intense photoluminescence between 1.3 and 1.8μm from strained $Si_{1-x} Ge_x$Si1-xGex J.P. Noel;N.L. Rowell;D.C. Houghyon;D.D. Perovic
  26. J. Appl. Phys. v.62 no.3 The kinetics and mechanism of oxide layer formation from porous silicon formed on p-Si substrate J.J. Yon;K. Barla;R. Herino;G. Bomchil
  27. J. Appl. Phys. v.71 no.9 Time-resolved photoluminescence in anodically etched silicon T.P. Pearsall;J.C. Adams;J.E. Wu;B.Z. Nosho;C. Aw;J.C. Patton
  28. App. Phys. Lett. v.59 no.22 Thermal treatment studies of the photoluminescence intensity of porous silicon C. Tsai;K.H. Li;J. Sarathy;S. Shih;J.C. Campbell;B.K. Hance;J.M. White
  29. J. Cryst. Growth v.73 no.622 An experimental and theoretical study of the formation and microstructure of porous silicon M.I.J. Beale;J.D. Benjamin;M.J. Uren;N.G. Chew;A.G. Cullis
  30. J. Phys. C v.17 Optical studies of the structure of porous silicon films in p-type degenerate and non-degenerate silicon C. Pickering;M.I.J. Beale;D.J. Robbins;P.J. Pearson;R. Greef
  31. J. Electrochem. Soc. v.137 no.9 Porous silicon oxide layer formation by the electrochemical treatment of a porous silicon layer M. Yamana;N. Kashiwazaki;A. Kinoshita;T. Nakano;M. Yamamoto;C.W. Walton