A Study on the Photoluminescence of Porous Si

다공성 실리콘의 발광에 관한 연구

  • Kim, Seok (Dept. of Ceramic Eng., Yonsei University) ;
  • Choi, Doo-Jin (Dept. of Ceramic Eng., Yonsei University) ;
  • Yoon, Young-Soo (Devision of Ceramics, Korean Institute of Science and Technology) ;
  • Yang, Doo-Young (LG Semiconductor Co. LTD) ;
  • Kim, Woo-Shik (LG Semiconductor Co. LTD)
  • 김석 (연세대학교 세라믹공학과) ;
  • 최두진 (연세대학교 세라믹공학과) ;
  • 윤영수 (한국과학기술연구원 세라믹스부) ;
  • 양두영 (LG 반도체) ;
  • 김우식 (LG 반도체)
  • Published : 1995.05.01

Abstract

Porous silicon (PS) was prepared under different anodization conditions and the photoluminescence (PL) was measrued. In addition PL of the naturally and thermally oxidized PS was measured. It was found that the PL peak was shifted to shorter wavelength as the anodization current density and the extent of the oxidation increased. The absence of correlation between the PL behavior and the surface hydrogen species (Si-H2, Si-H) implies that the mechanism of PL of PS is not likely related to the surface hydrogen species effect but to the quantum confinement effect.

Keywords

Anodization;Porous silicon;Photoluminescence;Quantum confinement effect

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