Film Properties of MOCVD TiN prepared by TDMAT and TDMAT/$NH_3$

TDMAT와 TDMAT/$NH_3$ 로 형성한 MOCVD(Metal Organic Chemical Vapor Deposition) Titanium Nitride 박막의 특성

  • 백수현 (한양대학교 재료공학과) ;
  • 김장수 (한양대학교 재료공학과) ;
  • 박상욱 (한양대학교 전자공학과) ;
  • 원석준 (한양대학교 재료공학과) ;
  • 장영학 (한양대학교 전자공학과) ;
  • 오재응 (한양대학교 전자공학과) ;
  • 이현덕 (삼성전자 주식회사 반도체 연구소) ;
  • 이상인 (삼성전자 주식회사 반도체 연구소) ;
  • 최진석 (삼성전자 주식회사 반도체 연구소)
  • Published : 1995.10.01


Thin films of titanium nitride are formed using the tetrakis-dimethyl-amino-titanium (TDMAT(Ti[N($CH_3$)$_2$]$_4$)) under various conditions. The formation of TiN films has been obtained from the thermal decomposition of the Ti-precursor and the gas phase reaction between TDMAT and ammonia(NH$_3$). The resistivity of the MOCVD film can be attributed to their impurity. Especially the curve fitting graph of XPS data is revealed that main impurities in the films as carbon and oxygen make various interstitial compounds which has influenced physical and electrical properties of the film. In the contact hole with the aspect ratio of 3:1 and the diameter of 0.5${\mu}{\textrm}{m}$, the SEM morphology shows that the step coverage is more decreased in the films formed y flowing ammonia additionally than the films formed by pyrolysis of TDMAT and the phenomenon is probably related with the activation energy.



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