Preparation and Electrical Properties of $(Ba_{1-x},\;Sr_x)TiO_3$ Thin Film by Metal-Organic Chemical Vapor Deposition

유기 금속 화학 증착법에 의한 $(Ba_{1-x},\;Sr_x)TiO_3$ 박막의 제조 및 전기적 특성

  • Yun, Jong-Guk (Dept. of Materials Engineering, Chungnam National University) ;
  • Yun, Sun-Gil (Dept. of Materials Engineering, Chungnam National University)
  • Published : 1995.10.01


(Ba$_{1-x}$ , Sr$_{x}$)TiO/$_3$thin films on Pt/Ti/SiO$_2$/Si substrates were prepared by LP MOCVD(Low Pressure Metal-Organic Chemical Vapor Deposition). The crystalinity of BST deposit had a (100) preferred orientation with increasing deposition temperature due to surface diffusion. BST films deposited at 90$0^{\circ}C$ showed a dielectric constant of 365 and a dissipation factor of 0.052 at a frequency of 100kHz. The chance of capacitance of the films with applied voltage was small, showing paraelectric properties. BST film deposited at 90$0^{\circ}C$ had a charge storage density of 60 fc/${\mu}{\textrm}{m}$$^2$at a field of 0.2MV/cm and the leakage current density of 20 nA/$\textrm{cm}^2$ at a field of 0.15 MV/



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