Thermochromic VV$_{1-x}$ Sn$_{x}$O$_2$Thin Films by Reactive E-beam Evaporation

반응성 전자빔 방법에 의한 써모크로믹 V$_{1-x}$ Sn$_{x}$O$_2$박막

  • Kim, Myoung-Geun (Dept.of Electronic Materials Science, The University of Suwon) ;
  • Lee, Moon-Hee (Dept.of Electronic Materials Science, The University of Suwon)
  • 김명근 (수원대학교 전자재료공학과) ;
  • 이문희 (수원대학교 전자재료공학과)
  • Published : 1995.10.01


VO$_{x}$ and V$_{1-x}$ Sn$_{x}$O$_2$thin films were fabricated on a glass under various $O_2$pressure by reactive e-beam evaporation method. Thermochromism and transition temperatures of these thin films were examined by measuring spectral solar transmittances with spectrophotometer at various temperatures, and their stoichiometries were analyzed by RBS. Oxygen pressure of 5$\times$10$^{-5}$ . Torr was found to be optimum to fabricate near stoichiometric VO$_2$thin film by reactive e-beam evaporation. Rapid thermal annealing(RTA) was adopted to crystallize the thin films and annealing at 40$0^{\circ}C$ ~45$0^{\circ}C$ for 20 ~ 30 seconds was found to be the optimum annealing condition for the crystallization of VO$_2$thin film of 100nm-300nm thickness. 1~6 atomic percent of Sn was doped into VO$_2$thin films to fabricate V$_{1-x}$ Sn$_{x}$O$_2$thin films. These V$_{1-x}$ Sn$_{x}$O$_2$thin films showed distinct thermochromism and significantly higher transition temperatures than VO$_2$thin film.



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