Defect Formatìon and Annealìng Behavìor in MeV Si Self-Implanted Silicon

MeV Si 자기 이온주입된 단결정 Silicon내의 결함 거동

  • Cho, Nam-Hoon (Department of Metallurgy and Materials Science, Hong-Ik University) ;
  • Jang, Ki-Wan (Department of Materials Science and Engineering, KAIST) ;
  • Suh, Kyung-Soo (Electronics and Telecommunication Research Institute) ;
  • Lee, Jeoung-Yong (Department of Materials Science and Engineering, KAIST) ;
  • Ro, Jae-Sang (Department of Metallurgy and Materials Science, Hong-Ik University)
  • 조남훈 (홍익대학교 금속.재료공학과) ;
  • 장기완 (한국과학기술원 재료공학과) ;
  • 서경수 (한국전자통신연구소) ;
  • 이정용 (한국과학기술원 재료공학과) ;
  • 노재상 (홍익대학교 금속.재료공학과)
  • Published : 1996.07.01

Abstract

In this study MeV Si self ion implantations were done to reveal the intrinsic behavior of defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant ones. Self implantations were conducted using Tandem Accelerator with energy ranges from 1 to 3 MeV. Defect formation by high energy ion implantation has a significant characteristics in that the lattice damage is concentrated near Rp and isolated from the surface. In order to investigate the energy dependence on defect formation, implantation energies were varied from 1 to 3 MeV under a constant dose of $1{\times}10^{15}/cm^2$. RBS channe!ed spectra showed that the depth at which as-implanted damaged layer formed increases as energy increases and that near surface region maintains better crystallinity as energy increases. Cross sectional TEM results agree well with RBS ones. In a TEM image as-implanted damaged layer appears as a dark band, where secondary defects are formed upon annealing. In the case of 2 MeV $Si^+$ self implantation a critical dose for the secondary defect formation was found to be between $3{\times}10^{14}/cm^24$ and $5{\times}10^{14}/cm^2$. Upon annealing the upper layer of the dark band was removed while the bottom part of the dark band did not move. The observed defect behavior by TEM was interpreted by Monte Carlo computer simulations using TRIM-code. SIMS analyses indicated that the secondary defect formed after annealing gettered oxygen impurities existed in silicon.

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