Interface formation and thermodynamics between SiC and thin metal films

SiC와 금속박막간의 계면형성 및 열역학

  • Chang-Sung Lim (Dept. of Material Chemical Engineering, Chonnam National University, Kwangju 500-757, Korea) ;
  • Kwang-Bo Shim (Ceramic Materials Research Institute, Hanyang University, Seoul 133-791, Korea) ;
  • Dong-Woo Shin (Dept. of Inorganic Materials Engineering, Gyeongsang National University, Chinju 660-7f01, Korea) ;
  • Keun-Ho Auh (Ceramic Materials Research Institute, Hanyang University, Seoul 133-791, Korea)
  • Published : 1996.03.01


The interface formation and reaction-product morphology between SiC and thin metal films were studied at temperatures between 550 and $1450^{\circ}C$ for various times. The typical reaction layer sequence was CoSi/CoSi+C/CoSi/CoSi+C/ $\cdots$ /SiC reaction at 1050 and $1250^{\circ}C$ for 2 h, while $Ni_2Si/Ni_2Si+C/Ni_2Si/Ni_2Si+C/ {\cdots} /SiC$ at 950 and 105$0^{\circ}C$ for 2 h. Carbon precipitated preferentially on the outer surface and crystallized as graphite above $1450^{\circ}C$ for SiC/Co reaction zone and $1250^{\circ}C$ for SiC/Ni. The mechanism of the periodic band structure formation with carbon precipitation behaviour was discussed in terms of thermodynamic considerations.



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