Temperature dependent hysteresis characteristics of a-Si:H TFT

비정질 실리콘 박막 트랜지스터 히스테리시스 특성의 온도의존성

  • Published : 1996.03.01

Abstract

The temperature dependent characteristics of hydrogenerated amorphous silcon thin film transistor (a-Si:H TFT) with a bottom gate of N-Type <100> Si wafer were investigated. Drain current on the hysteresis characteristic curve showed an exponential variation. Hysteresis area of TFT increased with the gate voltage increased and decreased with the small gate voltage. According to the variation of gate voltages, drain current of TFT increased by temperature increase, and hysteresis characteristics mainly depended on the temperature increase. The hysteresis current showed negative characteristics curve over 383K. The hysteresis occurance area and the differences of forward and reverse sweep were increased at the higher temperature. Hysteresis current of I$_{d}$(on/off) ratio decreased at the lower temperature and increased at the higher temperature.e.