A Study on the Diffusion Barrier at the p/n Junctions of $Bi_{0.5}Sb_{1.5}Te_3/Bi_2Te_{2.4}Se_{0.6} p/n$ Thermoelectric Thin Films

열전 박막 $Bi_{0.5}Sb_{1.5}Te_3/Bi_2Te_{2.4}Se_{0.6} p/n$ 접합에서의 확산 장벽에 관한 연구

  • Kim, Il-Ho (Dept. of Metallurgical Engineering, Yonsei University) ;
  • Lee, Dong-Hui (Dept. of Metallurgical Engineering, Yonsei University)
  • 김일호 (연세대학교 금속공학과) ;
  • 이동희 (연세대학교 금속공학과)
  • Published : 1996.07.01


In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.



  1. Proc. of the 11th ICT C. Gladun(et al.)
  2. J. of the Korean Inst. of Metals v.28 Sang-Youb Lee;Dong-Hi Lee
  3. Proc. of the 12th ICT H. Scherrer;S. Scherrer
  4. J. of Appl. Phys. v.22 C. Zener
  5. Solid State Comm. v.565 J. George;B. Pradeep
  6. J. of Appl. Phys. v.67 V.Damodara Das;K. Seetherma Bhat
  7. Proc. of the 3th ICTEC J. Przyluski(et al.)
  8. J. of Mat. Sci. Lett. v.7 E. Charles(et al.)
  9. Proc. of the 13th ICT II-Ho Kim;Dong-Hi Lee
  10. J. of Vac. Sci. Tech. v.A1 Y.H. Shing(et al.)
  11. J. of Phys. Chem. Solids v.43 A.L. Dawar(et al.)
  12. Proc. of the 10th ICT M. Muraki;D.M. Rowe
  13. Korean Appl. Phys. v.3 Myeong-Gwon Gu;Sang-Youb Lee;Dong-Hi Lee
  14. Proc. of the 12th ICT II-Ho Kim;Dong-Hi Lee
  15. Proc. of the 3th IUMRS-ICA II-Ho Kim;Seung-Wook Han;Dong-Hi Lee
  16. Proc. of the 14th ICT II-Ho Kim;Byoung-Gue Min;Dong-Hi Lee
  17. Proc. of the 6th ICTEC J. Przyluki;K.Borkowski
  18. Proc. of the 4th ICTEC D.K. Benson;C.E. Tracy
  19. J. of Phys. Chem. Solid v.13 R.O. Carlson
  20. Proc. of the 12th ICT T. Amano(et al.)
  21. Proc. of the 8th ICTEC Yu. A. Boikov
  22. Thermoelectric Refrigeration H.J. Goldsmid
  23. Korean Appl. Phys. v.3 Jae-Min Myeong;Sang-Youb Lee;Dong-Hi Lee