A Study on the Diffusion Barrier at the p/n Junctions of $Bi_{0.5}Sb_{1.5}Te_3/Bi_2Te_{2.4}Se_{0.6} p/n$ Thermoelectric Thin Films

열전 박막 $Bi_{0.5}Sb_{1.5}Te_3/Bi_2Te_{2.4}Se_{0.6} p/n$ 접합에서의 확산 장벽에 관한 연구

  • Kim, Il-Ho (Dept. of Metallurgical Engineering, Yonsei University) ;
  • Lee, Dong-Hui (Dept. of Metallurgical Engineering, Yonsei University)
  • 김일호 (연세대학교 금속공학과) ;
  • 이동희 (연세대학교 금속공학과)
  • Published : 1996.07.01


In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.



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