Real-time controlled deposition of anti-reflection and high-reflection coatings for semiconductor laser

반도체 레이저 단면의 실시간 무반사 및 고반사 코팅

  • 김효상 (인하대학교 물리학과) ;
  • 박흥진 (인하대학교 물리학과) ;
  • 황보창권 (인하대학교 물리학과) ;
  • 김부균 (숭실대학교 전자공학과) ;
  • 김형문 (한국전자통신연구소 화합물반도체연구부 광전자연구실) ;
  • 주흥로 (한국전자통신연구소 화합물반도체연구부 광전자연구실)
  • Published : 1997.10.01


We have obtained the optimum thickness of anti-reflection(AR) coating on one of facets of a $\1.55mu\textrm{m}$ InGaAsP MQW FP semiconductor laser by in-site monitoring of the light emitted from the rear facet during the film deposition on the fore facet. The optimum thickness of $SiO_x$ thin film whose refractive index is 1.85 was found to be 188 nm. The reflectivity of the coated facet was calculated by the threshold current ratio of before and after AR coating, which was obtained from exprimental data, and it was about 2$\times$ $10^{-4}$. The results show that the output power is increased by 87% at bias current 60 mA, the slope efficiency is increased by 3.4 times, and the threshold current is increased by 2.64 times. By in-situ depositing of the $Si/SiO_2$ thin film HR coating on the rear facet, the output power was increased by 160% than before the AR and HR coatings, the slope efficiency was increased by 3.8 times, the threshold current was increased by 1.07 times, which is similar to the value of before AR coating. Due to the AR and HR coatings the output light power characteristics were enhanced.



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