Determination of the complex refractive index of $Ge_2Sb_2Te_5$ using spectroscopic ellipsometry

분광타원해석법을 이용한 $Ge_2Sb_2Te_5$ 의 복소굴절율 결정

  • Kim, S. J. (Department of Physics, Ajou University) ;
  • Kim, S. Y. (Department of Physics, Ajou University) ;
  • Seo, H. (LG Corporate Institute of Technology) ;
  • Park, J. W. (LG Corporate Institute of Technology) ;
  • Chung, T. H. (LG Corporate Institute of Technology)
  • Published : 1997.12.01


The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.



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