LPCVD 공정중 웨이퍼의 온도장 해석

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김일경;정민철;유승일;채승기;김우승;남기흠
Kim, Il-Gyeong;Jeong, Min-Cheol;Yu, Seung-Il;Chae, Seung-Gi;Kim, U-Seung;Nam, Gi-Heum

  • 발행 : 1998.05.01

초록

In the LPCVD reactor the temperature variations within the wafer load are the most important factor to maintain the thickness of the materials deposited on the surface of the wafer constant and to affect the deformation of each wafer. In this study the temporal variations of radial and axial temperature nonuniformities of each wafer in the LPCVD reactor are numerically estimated by assuming diffuse reflection. To verify the validity of the present numerical results, the present results obtained from the transient analysis are compared with those of Badgwell's work in which a steady-state condition was assumed. The main objective of this work is to determine the temporal variations of the temperature of each wafer in the LPCVD process since the wafers experience severe change in temperature in the early stage of the process.

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