A Study on Photoresist Stripping Using High Density Oxygen Plasma

고밀도 산소 플라즈마를 이용한 감광제 제거공정에 관한 연구

  • 정형섭 (인하대학교 반도체 및 박막기술연구소) ;
  • 이종근 (인하대학교 반도체 및 박막기술연구소) ;
  • 박세근 (인하대학교 반도체 및 박막기술연구소) ;
  • 양재균 (피에스케이(주) 부설연구소)
  • Received : 1997.08.11
  • Accepted : 1997.12.26
  • Published : 1998.02.15


A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.


Supported by : 인하대학교