A Study on the Structure of Polarization Independent GaInAs/GaInAsP/InP Semiconductor Optical Amplifier

편광 비의존성 GaInAs/GaInAsP/InP 반도체 광 증폭기 구조에 관한 연구

  • 박윤호 (한국과학기술연구원 광기술연구센터) ;
  • 강병권 (한국과학기술연구원 광기술연구센터) ;
  • 이석 (한국과학기술연구원 광기술연구센터) ;
  • 조용상 (연세대학교 전자공학과) ;
  • 김정호 (한국해양대학교 전자통신공학과) ;
  • 황상구 (한국해양대학교 전자통신공학과) ;
  • 홍창희 (한국해양대학교 전자통신공학과)
  • Published : 1999.09.01


In this study, the gain characteristics of the strained structures for SOA were calculated numerically and the optimized strained quantum well for the polarization-insensitive SOA was obtained. The structures used in this calculation were consisted of one, two, and three GaAs Delta layers respectively in the GaInAs(160 $\AA$) well. Moreover the third one was calculated by changing from one mono-layer to three mono-layers in the thichless of GaAs delta layers. This structure enhances the TM mode gain coefficient with good efficiency because the light-hole band is lifted up whereas the heavy-hole band is lowered down. Additionally, The structure of the 3 GaAs delta layers(1 mono layer thickness) shows 3dB gain bandwidth of 85nm in 1.55um wavelength system. This study is expected to be used in making a wide band and polarization-independent semiconductor optical amplifier practically.