Effects of Ti or Ti/TiN Underlayers on the Crystallographic Texture and Sheet Resistance of Aluminum Thin Films

Ti 또는 Ti/TiN underlayer가 Al 박막의 배향성 및 면저항에 미치는 영향

  • Lee, Won-Jun (Research Center, Hyundai Microelectronics) ;
  • Rha, Sa-Kyun (Department of Materials Engineering, Taejon National University Technology)
  • 이원준 (현대반도체 연구소) ;
  • 나사균 (대전산업대학교 재료공학과, 반도체기술연구소)
  • Published : 2000.01.01

Abstract

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

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