Growth of SiC film on SiNx/Si Structure

SiNx/Si 구조를 이용한 SiC 박막성장

  • 김광철 (전북대학교 반도체과학기술학과) ;
  • 박찬일 (전북대학교 반도체과학기술학과) ;
  • 남기석 (전북대학교 반도체과학기술학과, 전북대학교 화학공학부) ;
  • 임기영 (전북대학교 반도체과학기술학과, 전북대학교 과학기술학부)
  • Published : 2000.04.01

Abstract

Silicon carbide(SiC) films were grown on modified Si(111) surface with a SiNx in the NH$_3$surrounding. Thickness of SiC films was decreased with increasing of the nitridation time. Also, voids having crystal defects were removed at interface of SiC/Si according to growth parameters. SiC films were grown on SiNx/Si substrate of 100, 300 and 500nm thickness. SiC films were deposited along [111] direction and columnar grains of SiC crystal. The void-free film was observed in the interface of SiC/SiNx. This result suggests that fabrication of SiC devices are applied to SiNx replacing silicon oxide in SOI structure.

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