Single Grained PZT Array Fabricated by Physical Etching of Pt Bottom Electrode

  • Park, Eung-Chul (School of Material Science and Engineering Seoul National University) ;
  • Lee, Jang-Sik (School of Material Science and Engineering Seoul National University) ;
  • Kim, Kwang-Ho (School of Material Science and Engineering Seoul National University) ;
  • Park, Jung-Ho (School of Material Science and Engineering Seoul National University) ;
  • Lee, Byung-Il (School of Material Science and Engineering Seoul National University)
  • Published : 2000.03.01

Abstract

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

References

  1. Science v.246 Ferroelectric Memoties J.F. Scott;C.A. Araujo
  2. IEEE Trans. Ultrasonic, Ferroelectrics and Frequency Control v.38 no.6 Electrical and Reliability Properties of PZT Thin Films for ULSI DRAM Applications J. Carrano;C. Sudhama;J. Lee;Al. Tasch;W. Shepherd;N. Abt.
  3. J. Vac. Sci. Tech. A. v.10 no.4 Integration of Ferroelectric Thin Films into Nonvolatile Memories S. Sinharoy;H. Buhay;D.R. Lampe;M.H. Francombe
  4. Proceeding of 4th International Symposium on Integrated Ferroelectrics Polarization Fatigue in Perovskite Ferroelectric Ceramics and Thin Films J. Chen;M.P. Harmer;D.M. Smith`
  5. Integrated Ferroelectrics v.5 Degradation of Ferroelectric Thin Films:A Defect Chemistry Approach M.V. Raymond;J. Chen;D.M. Smith
  6. Appl. Phys. Lett. v.66 no.2 Influence of platinum interlayers on the electrical properties of RuO₂/Pb(Zr0.53Ti0.47)O₃/RuO₂capacitor heterostructures H.N. Al-Shreef;K.R. Bellur;A.I. Kingon;O. Auciello
  7. Appl. Phys. Lett. v.65 no.12 Preparation of Pb(Zr, Ti)O₃thin films on electrodes including IrO₂ T. Nakamura;Y. Nakao;A. Kamisawa;H. Takasu
  8. Appl. Phys. Lett. v.68 no.2 Low Temparature Processing of Nb-doped Pb(zr, Ti)O₃Capacitors with La0.5Sr0.5CoO₃electrodes H.N. Al-Shareef;B.A. Tuttle;W.L. Warren;D. Dimos;M.V. Raymond;M.A. Rodriguez
  9. J. Appl. Phys. v.81 no.5 Single-crystal Pb(ZrxTi₁-x)O₃Thin Films Prepared by MOCVD : Systematic Compositional Variation of Electronic and Optical Properties C.M. Foster;G.-R. Bai;R. Csencsits;J. Vetrone;R. Jammy
  10. Mat. Res. Soc. Symp. Proc. v.310 Transmission Electron Microscopy of PZT thin Films Prepared by a Sol-gel Technique S. Seraphin;D. Dhou;G. Teowee;J.M. Boulton;D.R. Uhlmann
  11. Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials Fabrication and Characterization of the Single Grained PZT Thin Film J.-H. Joo;S.-K. Joo