Effects of the Ge Prearmophization Ion Implantation on Titanium Salicide Junctions

게르마늄 Prearmophization 이온주입을 이용한 티타늄 salicide 접합부 특성 개선

  • Kim, Sam-Dong (millimeter wave Advanced Technology Research Center, Dongguk University) ;
  • Lee, Seong-Dae (millimeter wave Advanced Technology Research Center, Dongguk University) ;
  • Lee, Jin-Gu (millimeter wave Advanced Technology Research Center, Dongguk University) ;
  • Hwang, In-Seok (millimeter wave Advanced Technology Research Center, Dongguk University) ;
  • Park, Dae-Gyu (Memory R&D Division,Hyundai Electronics Industries Co,Ltd.)
  • 김삼동 (동국대학교 밀리미터파 신기술연구센터) ;
  • 이성대 (동국대학교 밀리미터파 신기술연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술연구센터) ;
  • 황인석 (동국대학교 밀리미터파 신기술연구센터) ;
  • 박대규 (현대전자 산업주식회사 메모리 연구소)
  • Published : 2000.12.01

Abstract

We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.

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