Effects of the Ge Prearmophization Ion Implantation on Titanium Salicide Junctions

게르마늄 Prearmophization 이온주입을 이용한 티타늄 salicide 접합부 특성 개선

  • Kim, Sam-Dong (millimeter wave Advanced Technology Research Center, Dongguk University) ;
  • Lee, Seong-Dae (millimeter wave Advanced Technology Research Center, Dongguk University) ;
  • Lee, Jin-Gu (millimeter wave Advanced Technology Research Center, Dongguk University) ;
  • Hwang, In-Seok (millimeter wave Advanced Technology Research Center, Dongguk University) ;
  • Park, Dae-Gyu (Memory R&D Division,Hyundai Electronics Industries Co,Ltd.)
  • 김삼동 (동국대학교 밀리미터파 신기술연구센터) ;
  • 이성대 (동국대학교 밀리미터파 신기술연구센터) ;
  • 이진구 (동국대학교 밀리미터파 신기술연구센터) ;
  • 황인석 (동국대학교 밀리미터파 신기술연구센터) ;
  • 박대규 (현대전자 산업주식회사 메모리 연구소)
  • Published : 2000.12.01


We studied the effects of Ge preamorphization (PAM) on 0.25$\mu\textrm{m}$ Ti-salicide junctions using comparative study with As PAM. For each PAM schemes, ion implantations are performed at a dose of 2E14 ion/$\textrm{cm}^2$ and at 20keV energy using $^{75}$ /As+and GeF4 ion sources. Ge PAM showed better sheet resistance and within- wafer uniformity than those of As PAM at 0.257m line width of n +/p-well junctions. This attributes to enhanced C54-silicidation reaction and strong (040) preferred orientation of the C54-silicide due to minimized As presence at n+ junctions. At p+ junctions, comparable performance was obtained in Rs reduction at fine lines from both As and Ge PAM schemes. Junction leakage current (JLC) revels are below ~1E-14 A/$\mu\textrm{m}^{2}$ at area patterns for all process conditions, whereas no degradation in JLC is shown under Ge PAM condition even at edge- intensive patterns. Smooth $TiSi_2$ interface is observed by cross- section TEM (X- TEM), which supports minimized silicide agglomeration due to Ge PAM and low level of JLC. Both junction break- down voltage (JBV) and contact resistances are satisfactory at all process conditions.


  1. J. Electrochem. Soc. v.141 R.W. Mann;L.A. Clevenger
  2. IEEETrans. Electron Devices v.47 J.E. DiGregorio;R.N. Wall
  3. J. Appl. Phys. v.71 T.P. Nolan;R. Sinclair;R. Beyers
  4. IEEE Trans. Electron Devices v.38 J.B. Lasky;J.S. Nakos;O.J. Cain;P.J. Geiss
  5. Appl. Phys. Lett. v.67 R.W. Mann;G.L. Miles;T.A. Knotts;D.W. Rakowski;L.A. Clevenger;J.M. Harper;F.M. DHeurle;C. Cabral, Jr.
  6. VLSI Symposium Digest I. Sakai;H. Abiko;H. Kawaguchi;T. Hirayama;L.E.G. Johansson;K. Okabe
  7. Appl. Phys. Lett. v.69 R.T. Tung
  8. J. Appl. Phys. v.85 K. Tai;M. Okihara;M. Kageyama;Y. Harada;H. Onoda
  9. J. Appl. Phys. v.61 H.J.W. van Houtum;I.J.M.M. Raaijmakers;T.J.M. Menting
  10. IEEE VMIC Conf. Proc. N. Matsukawa;Y. Takai;A. Yamanaka;T. Nogami
  11. Thin Solid Films v.298 W.K. Wan;S.T. Wu
  12. J. Materials Res. v.14 A. Quintero;M. Libera;C. Cabral;C. Lavoie;J.M.E. Harper