Laterally-Driven Electrostatic Repulsive-Force Microactuator

수평구동형 정전반발력 마이크로액추에이터

  • Published : 2001.03.01


We present a new electrostatic repulsive-force microactuator using a lateral repulsive force induced by an asymmetric distribution of electrostatic field. The lateral repulsive force has been characterized by a simple analytical equation, derived from a finite element simulation. A set of repulsive force polysilicon microactuators has been designed and fabricated by a 4-mask surface-micromachining process. Static and dynamic micromechanical behavior of the fabricated microactuators has been measured at the atmospheric pressure for a varying bias voltage. The static displacement of the fabricated microactuator, proportional to the square of the DC bias voltage, is obtained as 1.27 $\mu\textrm{m}$ for the DC bias voltage of 140V. The resonant frequency of the repulsive-force microactuator increases from 11.7 kHz to 12.7 kHz when the DC bias voltage increases from 60V to 140V. The measured quality-factor varies from 12 to 13 for the bias volatge range of 60V∼140V. The characteristics of the electrostatic repulsive-force have been discussed and compared and compared with those of the conventional electrostatic attractive-force.


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