Development of Large Signal Model Extractor and Small Signal Model Verification for GaAs FET Devices

GaAs FET소자 모델링을 위한 소신호 모델의 검증과 대신호 모델 추출기 개발

  • 최형규 (광운대학교 RFIC 연구 및 교육센터/Mission technology 연구센터) ;
  • 전계익 (알에프코리아(주)) ;
  • 김병성 (성균관대학교 전자공학부) ;
  • 이종철 (광운대학교 RFIC 연구 및 교육센터/Mission technology 연구센터) ;
  • 이병제 (광운대학교 RFIC 연구 및 교육센터/Mission technology 연구센터) ;
  • 김종헌 (광운대학교 RFIC 연구 및 교육센터/Mission technology 연구센터) ;
  • 김남영 (광운대학교 RFIC 연구 및 교육센터/Mission technology 연구센터)
  • Published : 2001.08.01


In this paper, the development of large-signal model extractor for GaAs FET device through the Monolithic Microwave integrated Circuit(MMIC) is presented. The measurement program controlled by personal computer is developed for the processing of an amount of measured data, and the de-embedding algorithm is added to the program for voltage dropping as attached series resistance on measurement system. The small-signal model parameters are typically consisted of 7 elements that are considered as complexity of large-signal model and its the accuracy of the small-signal model is verified through comparing with measured data as varied bias point. The fitting function model, one of the empirical model, is used for quick simulation. In the process of large-signal model parameter extraction, one-dimensional optimization method is proposed and optimized parameters are extracted. This study can reduce the modeling and measuring time and can secure a suitable model for circuit.



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