Growth and electrical properties of $Sr_2$$({Ta_{1-x}},{Nb_x})_2$)$O_7$ thin films by RF sputtering

RF Sputtering을 이용한 $Sr_2$$({Ta_{1-x}},{Nb_x})_2$)$O_7$ 박막의 성장 및 전기적 특성

  • In, Seung-Jin (Department of Materials Science, Korea University) ;
  • Choi, Hoon-Sang (Department of Materials Science, Korea University) ;
  • Lee, Kwan (Department of Materials Science, Korea University) ;
  • Choi, In-Hoon (Department of Materials Science, Korea University)
  • 인승진 (고려대학교 재료공학과) ;
  • 최훈상 (고려대학교 재료공학과) ;
  • 이관 (고려대학교 재료공학과) ;
  • 최인훈 (고려대학교 재료공학과)
  • Published : 2001.05.01

Abstract

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

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