Analysis of Trace Trichlorosilane in High Purity Silicon Tetrachloride by Near-IR Spectroscopy

근적외선 분광법을 이용한 고순도 SiCI4 중의 미량 불순물 SiHCI3의 분석

  • Park, Chan-Jo (Chemical Analysis Laboratory, Korea Research Institute of Chemical Technology) ;
  • Lee, Sueg-Geun (Chemical Analysis Laboratory, Korea Research Institute of Chemical Technology)
  • Received : 2001.10.15
  • Published : 2002.02.25

Abstract

The content of $SiHCl_3$ as a trace impurity in $SiCl_4$ was analyzed by Near IR spectrophotometer with optical fiber. The strong absorption bands of $5345{\sim}5116cm^{-1}$ and $4848{\sim}4349cm^{-1}$ were used for analysis of $SiHCl_3$, and the detection limit of impurity $SiCl_3$ was appeared to be 0.005 % in the spectrum. The quantitative analysis by Near IR spectrophotometry showed the analytical possibility of trace impurity in $SiCl_4$ without sample pre-treatment not only in the laboratory but also in the field.

Keywords

near IR;optical fiber;silicon tetrachloride;trichlorosilane

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