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Application of Surfactant added DHF to Post Oxide CMP Cleaning Process

계면활성제가 첨가된 DHF의 Post-Oxide CMP 세정 공정에의 적용 연구

  • Published : 2003.12.20

Abstract

In order to remove particles on surface of post-oxide CMP wafer, new cleaning solution was prepared by mixing with DHF (Diluted HF), nonionic surfactant PAAE (Polyoxyethylene Alkyl Aryl Ether), DMSO (Dimethylsulfoxide) and D.I.W.. Silicone wafers were intentionally contaminated by silica, alumina and PSL (polystylene latex) which had different zeta potentials in cleaning solution. This cleaning solution under megasonic irradiation could remove particles and metals simultaneously at room temperature in contrast to traditional AMP (mixture of $NH_4OH,\;H_2O_2$ and D.I.W) without any side effects such as increasing of microroughness, metal line corrosion and deposition of organic contaminants. This suggests that this cleaning solution would be useful future application with copper CMP in brush cleaning process as well as traditional post CMP cleaning process.礂댐𡦖⨀ꇅȀ‷ᔂ–ꞚĀĀĀĀ Ѐ̀ 밟ꘂĀ

Keywords

Post-oxide CMP;Surfactant;Cleaning Solution

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