Effective Silicon Oxide Formation on Silica-on-Silicon Platforms for Optical Hybrid Integration

  • Kim, Tae-Hong (Information Technology Research Laboratory, ETRI) ;
  • Sung, Hee-Kyung (Optical Communication Devices Department, ETRI) ;
  • Choi, Ji-Won (Thin Film Technology Research Center, Korea Institute of Science and Technology) ;
  • Yoon, Ki-Hyun (Department of Ceramics Engineering, Yonsei University)
  • Received : 2002.08.27
  • Published : 2003.04.30


This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.



  1. ETRI J. v.24 no.2 An Optimization Approach to Routing and Wavelength Assignment in WDM All-Optical Mesh Networks without Wavelength Conversion Lee, Kyung-Sik;Kang, Kug-Chang;Lee, Tae-Han;Park, Sung-Soo
  2. J. Lightwave Technol. v.20 no.3 Subcarrier Multiplexing for High-Speed Optical Transmission Hui, R.;Zhu, B.;Huang, R.;Allen, C.T.;Demarest, K.R.;Richards, D.
  3. IEEE Trans. on Advanced Packaging v.24 no.4 Advances in Multichannel MultiGbytes/s Bit-Parallel WDM Single Fiber Link Bergman, L.A.;Yeh, C.;Morookian, J.
  4. IEEE Photon. Technol. Lett. v.13 no.10 An Eight-Wavelength 160-km Transparent Metro WDM Ring Network Featuring Cascaded Erbium-Doped Waveguide Amplifiers Reichmann, K.C.;Iannone, P.P.;Birk, M.;Frigo, N.J.;Barbier, D.;Cassagnettes, C.;Garret, T.;Verlucco, A.;Perrier, S.;Philipsen, J.
  5. IEEE Comm. Mag. Evolution of Optical Transport Technologies: From SONET/SDH to WDM Cavendish, D.
  6. ETRI J. v.24 no.2 Design of Hybrid Optical Amplifier for High Capacity Optical Transmission Kim, Seung-Kwan;Chang, Sun-Hyok;Han, Jin-Soo;Chu, Moo-Jung
  7. IEEE Photon. Technol. Lett. v.14 no.4 A Novel Method for Fabrication of a PLC Platform for Hybrid Integration of an Optical Module by Passive Alignment Park, S.J.;Jeong, K.T.;Park, S.H.;Sung, H.K.
  8. ETRI J. v.24 no.4 Polymer-Based Devices for Optical Communications Lee, Myung-Hyun;Ju, Jung-Jin;Park, Sun-Tak;Do, Jung-Yun;Park, Seung-Koo
  9. IEEE J. Selected Topics in Quantum Electron v.6 no.1 PLC Hybrid Integration Technology and Its Application to Photonic Component Kato, K.;Tohmori, Y.
  10. Opt. Quantum Electron. v.22 Silica Waveguides on Silicon and their Application to Integrated Components Kawachi, M.
  11. IEEE Photon. Technol. Lett. v.10 High-Speed Optoelectronic Hybrid-Integrated Transmitter Module Using a Planar Lightwave Circuit(PLC) Platform Mino, S.;Ohyama, T.;Akahori, Y.;Yanagisawa, M.;Hashimoto, T.;Yamada, Y.;Tsunetsugu, H.;Togashi, M.;Itaya, Y.;Shibata, Y.
  12. J. Lightwave Technol. v.13 no.12 Planar Lightwave Circuit Platform with Coplanar Waveguide for Opto-Electronic Hybrid Integration Mino, S.;Yoshino, K.;Yamada, Y.;Terui, T.;Yasu, M.;Morowaki, K.
  13. IEEE J. Selected Topics Quantum Electron. v.4 no.6 Silica-Based Planar Lightwave Circuits Himeno, A.;Kato, K.;Miya, T.
  14. IEICE Trans. Electron. v.E83-C no.6 Simultaneous Wavelength Conversion Using SOAPLC Hybrid Wavelength Selector Ito, T.;Ogawa, I.;Suzaki, Y.;Magari, K.;Kawaguchi, Y.;Mitomi, O.
  15. OFC Conf.2000 v.2 Fabrication of Silica-on-Si Waveguide with High Index Difference and Its Application to 256 Channel Arrayed-Waveguide Multi/Demultiplexer Hibino, Y.;Hida, Y.;Kaneko, A.;Itho, M.;Goh, T.;Saida, A.;Himeno, A.;Ohmori, Y.
  16. Electron. Lett. v.32 no.9 Filter-Embedded Wavelength Division Multiplexer for Hybrid-Integrated Transceiver Based on Silica-Based PLC Inoue, Y.;Oguchi, T.;Hibino, Y.;Suzuki, S.;Yanagisawa, M.;Moriwaki, K.;Yamada, Y.
  17. Electron. Lett. v.32 no.18 Passively Aligned Hybrid WDM Module Integrated with Spot-Size Converter Integrated Laser Diode and Waveguide Photodiode on PLC Platform for Fiber-to-the-Home Uchida, N.;Hibino, Y.;Suzuki, Y.;Kurosaki, T.;Ishihara, N.;Nakamura, M.;Hashimoto, T.;Akahori, Y.;Inoue, Y.;Moriwaki, K.;Yamada, Y.;Kato, K.;Tohmori, Y.;Wada, M.;Sugie, T.
  18. Electron. Lett. v.34 no.10 Hybrid Integrated $4{\times}4$ Optical Matrix Switch Using Self-Aligned Semiconductor Optical Amplifier Gate Arrays and Silica Planar Lightwave Circuit Sasaki, J.;Hatakeyama, H.;Tamaniki, T.;Kitamura, S.;Yamaguchi, M.;Kitamura, M.;Shimoda, T.;Kitamura, M.;Kato, T.;Itoh, M.
  19. Anal. Chem. v.72 Flame Hydrolysis Deposition of Glass on Silicon for the Integration of Optical Microfluidic Devices Ruano, J.M.;Benoit, V.;Aitchison, J.S.;Cooper, J.M.
  20. IEE Proc.-Optoelectron. v.143 no.5 Co-Doping Effects in Rare-Earth-Doped Planar Waveguides Bonar, J.R.;Aitchison, J.S.
  21. Electron. Lett. v.28 no.5 Vertically Integrated High-Silica Channel Waveguide on Si Barbarossa, G.;Laybourn, P.J.R.
  22. ECTC 44th Conf. Proc. Etching Defects on KOH Etched Silicon-Implementation of Silicon Bench Technology for Low Cost Packaging Han, H.;Boudreau, R.;Bowen, T.;Tan, S.;Reed, M.L.
  23. Electro. Lett. v.29 no.9 New Etchant for Crystallographic Defect Studies in Thin SOI Materials($<1000 {\AA}$) Giles, F.;Nejim, A.;Hemment, P.L.F.
  24. Proc. 1994 IEEE Int'l SOI Conf. Nano-Defect in Commercial Bonded SOI and SIMOX Sadana, D.K.;Lasky, J.;Hovel, H.J.;Petrillo, K.;Roitman, P.
  25. 1999 Semiconductor Conf. v.1 A Comparison between the Complexant Alkaline Etching System of Silicon Romania
  26. Solid-State & Integrated Circuit Technol.,5th Int'l Conf. Investigation of KOH Anisotropic of SI <100 > Wafers for Improving Etched Surface Quality Liu, W.W.;Xiaowei, L.;Xilian, W.;Yuqiang, L.;Maojun, F.
  27. MEMS'94 proc., IEEE Workshop on 1994 Process Induced Hillock Defects on Anisotropically Etched Silicon Tan, S.S.;Han, H.;Boufreau, R.;Reed, M.L.
  28. J. MEMS. v.5 no.1 Mechanism of Etch Hillock Formation Tan, S.S.;Reed, M.L.;Han, H.;Boufreau, R.