Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films with Various Drying Temperature for FRAM Applications

FRAM 응용을 위한 건조온도에 따른 BLT 박막의 강유전 특성

  • 김경태 (중앙대학교 전기전자공학부) ;
  • 김동표 (중앙대학교 전기전자공학부) ;
  • 김창일 (중앙대학교 전기전자공학부) ;
  • 김태형 (여주대학 전기과) ;
  • 강동희 (중앙대학교 화학과) ;
  • 심일운 (중앙대학교 화학과)
  • Published : 2003.04.01


Ferroelectric lanthanum-substituted Bi$_4$Ti$_3$O$_{12}$(BLT) thin films were fabricated by spin-coating onto a Pt/Ti/SiO$_2$/Si substrate by metalorganic decomposition technique. The grain size in BLT thin films were prepared with controlled by various drying process. The effect of grain size on the crystallization and ferroelectric properties were investigated by x-ray diffraction and field emission scanning electron microscope. The dependence of crystallization and electrical properties are related to the grain size in BLT thin films with different drying temperature. The remanent polarization of BLT thin film increases with the increasing grain size. The value of 2P$_{r}$ and E$_{c}$ of BLT thin film dried at 45$0^{\circ}C$ were 25.9 $\mu$C/$\textrm{cm}^2$ and 85 kV/cm, respectively. The BLT thin film with larger grain size has better fatigue properties. The fatigue properties revealed that small grained film showed more degradation of switching charge than large grained films.lms.s.


BLT;FRAM;Grain size;Ferroelectric;MOD


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