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The Dependency of Surface Damage to NiSi for CMOS Technology

CMOS 소자를 위한 NiSi의 Surface Damage 의존성

  • 지희환 (충남대학교 전자공학과) ;
  • 안순의 (충남대학교 전자공학과) ;
  • 배미숙 (충남대학교 전자공학과) ;
  • 이헌진 (충남대학교 전자공학과) ;
  • 오순영 (충남대학교 전자공학과) ;
  • 이희덕 (충남대학교 전자공학과) ;
  • 왕진석 (충남대학교 전자공학과)
  • Published : 2003.04.01

Abstract

The influence of silicon surface damage on nickel-silicide (NiSi) has been characterized and H$_2$ anneal and TiN rapping has been applied to suppress the electrical, morphological deterioration phenomenon incurred by the surface damage. The substrate surface is intentionally damaged using Ar IBE (Ion beam etching) which can Precisely control the etch depth. The sheet resistance of NiSi increased about 18% by the surface damage, which is proven to be mainly due to the reduced silicide thickness. It is shown that simultaneous application of H: anneal and TiN capping layer is highly effective in suppressing the surface damage effect.

Keywords

Ni-Silicide;Surface damage;TiN-Capping;CMOS technology

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