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Etch Characteristics of (Pb,Sr) TiO3 Thin films using Inductively Coupled Plasma

유도결합 플라즈마를 이용한 PST 박막의 식각 특성

  • 김관하 (중앙대학교 전기전자공학부) ;
  • 김경태 (중앙대학교 전기전자공학부) ;
  • 김동표 (중앙대학교 전기전자공학부) ;
  • 김창일 (중앙대학교 전기전자공학부)
  • Published : 2003.04.01

Abstract

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

Keywords

PST;Etching;ICP;$CF_4$/Ar;XPS

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