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Electron Emission From Porous Poly-Silicon Nano-Device for Flat Panel Display

다결정 다공성 실리콘의 전계방출 특성

  • Lee, Joo-Won ;
  • Kim, Hoon ;
  • Lee, Yun-Hi ;
  • Jang, Jin ;
  • Ju, Byeong-Kwon
  • 이주원 (한국과학기술연구원) ;
  • 김훈 (한국과학기술연구원) ;
  • 이윤희 (고려대학교 물리학과) ;
  • 장진 (경희대학교 물리학과) ;
  • 주병권 (한국과학기술연구원)
  • Published : 2003.04.01

Abstract

This paper reports the optimum structure of the vacuum packaged Porous poly-silicon Nano-Structured (PNS) emitter. The PNS layer was obtained by electrochemical etching process into polycrystalline silicon layer in a process controlled to anodizing condition. Current-voltage studies were carried out to optimize process condition of electron emission properties as a function of anodizing condition and top electrode thickness. Also, we measured in advance the electron emission properties as a function of substrate temperature because the vacuum packaged process was performed under the condition of high temperature ambient (430$^{\circ}C$). Auger Electron Spectrometer (AES) studies shows that Au as a top-electrode was diffused to PNS layer during temperature experiments. Thus, we optimized the thickness of top-electrode in order to make the vacuum package PNS emitter. As a result, the vacuum Packaged PNS emitter was successfully emitted by optimizing process.

Keywords

Porous poly-silicon Nano-Structured (PNS) emitter;Electrochemical etching process;Vacuum packaged process.

References

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