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The Effect of Thermal Annealing and Growth of CuAlSe2 Single Crystal Thin Film by Hot Wall Epitaxy

Hot Wall Epitaxy(HWE)법에 의한 CuAlSe2 단결정 박막 성장과 열처리 효과

  • 윤석진 (조선대학교 화학교육과) ;
  • 정태수 (전북대학교 물리학과) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 박진성 (조선대학교 신소재공학과) ;
  • 신동찬 (조선대학교 신소재공학과) ;
  • 홍광준 (조선대학교 물리학과) ;
  • 이봉주 (조선대학교 물리학과)
  • Published : 2003.10.01

Abstract

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

Keywords

Hot wall epitaxy;Single crystal thin film;Hall effect;Optical absorption;Photoluminescence;Point defect

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