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The Fabrication and Properties of Ito Transparent Conducting Film for PDP by the Discharge Plasma Analysis

방전플라즈마 해석을 통한 PDP용 ITO 투명전도막의 제작 및 특성

  • 곽동주 (경성대학교 전기전자공학전공) ;
  • 조문수 (경성대학교 전기전자공학전공) ;
  • 박강일 (경성대학교 전기전자공학전공) ;
  • 임동건 (충주대학교 전자공학과)
  • Published : 2003.10.01

Abstract

In this paper, the ITO thin film, which is considered as one of the most currently used material for the high performance transparent conducting films for the PDP cell, was made in a parallel-plate, capacitively coupled DC magnetron sputtering system. Some electrical and optical properties of ITO films were investigated and discussed on the basis of glow discharge characteristics. The optimized thin film fabricating conditions of Ar gas pressure and substrate temperature were derived from the Paschen curve and glow discharge characteristics. The maximum transmittance of 89.61 % in the visible region and optical band gap of 3.89 eV and resistivity of 1.67${\times}$10$\^$-3/ $\Omega$-cm were obtained under the conditions of 300 C of substrate temperature and 10∼15 mtorr of pressure, which corresponds nearly to that of Paschen minimum.

Keywords

ITO thin film;DC magnetron sputtering;POP cell;Discharge characteristics

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