Analysis of I-V Characteristics in the Multi-channel Superconducting Vortex Flow Transistor

다채널 고온 초전도 볼텍스 유동 트랜지스터의 I-V 특성 해석

  • 고석철 (전북대학교 전기공학과) ;
  • 강형곤 (전북대 반도체물성연구소) ;
  • 임성훈 (전북대학교 전기공학과) ;
  • 최효상 (조선대학교 전기공학과) ;
  • 한병성 (전북대학교부설공학연구원 공업기술연구센터)
  • Published : 2003.10.01


The principle of the superconducting vortex flow transistor (SVFT) is based on control of the Abrikosov vortex flowing along a channel. The induced voltage is controlled by a bias current and a control current, instead of external magnetic field. The device is composed of parallel weak links with a nearby current control line. We explained the process to get an I-V characteristic equation and described the method to induce the external and internal magnetic field by the Biot-Savarts law in this paper. The equation can be used to predict the I-V curves for fabricated device. From the equation we demonstrated that the current-voltage characteristics were changed with input parameters. I-V characteristics were simulated to analyze a SVFT with multi-channel by a computer program.


Current-voltage characteristics;Induced voltage;Superconducting vortex flow transistor


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