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Effects of Thermal Annealing on the Properties of Amorphous Carbon Nitride Films Deposited by PECVD

PECVD로 제조된 비정질 질화탄소 박막의 물성에 미치는 열처리 효과

  • Moon, Hyung-Mo (Dept. of Materials Science and Metallurgical Engineering, Sunchon National University) ;
  • Kim, Sang-Sub (Photonic and Electronic Thin Film Laboratory, Dept. of Materials Science and Engineering, Chonnam National University)
  • 문형모 (순천대학교 재료ㆍ금속공학과) ;
  • 김상섭 (전남대학교 신소재공학부 광ㆍ전자박막연구실)
  • Published : 2003.05.01

Abstract

Amorphous carbon nitride films deposited on Si(001) substrates by a plasma enhanced chemical vapor deposition (PECVD) technique using CH$_4$and $N_2$as reaction gases were thermally annealed at various temperatures under$ N_2$atmosphere, then their physical properties were investigated particularly as a function of annealing temperature. Above $600^{\circ}C$ a small amount of crystalline $\beta$-$C_3$$N_4$ phase evolves, while the film surface becomes very rough due to agglomeration of fine grains on the surface. As the annealing temperature increases, both the hardness and the $sp^3$ bonding nature are enhanced. In contrast to our expectation, higher annealing temperature results in a relatively higher friction mainly due to big increase in roughness at that temperature.

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