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Characteristics of Surface Reaction of SnO2 Thin Films Prepared by MOCVD

MOCVD로 제조한 SnO2 박막의 표면반응 특성

  • Park, Kyung-Hee (Research Institute of Energy Resources Technology, Chosun University) ;
  • Seo, Yong-Jin (Department of Electrical Engineering, Daebul University) ;
  • Hong, Kwang-Jun (Department of Physics, Chosun University) ;
  • Lee, Woo-Sun (Department of Electrical Engineering, Chosun University) ;
  • Park, Jin-Seong (Department of Material Engineering, Chosun University)
  • 박경희 (조선대학교 에너지자원신기술연구소) ;
  • 서용진 (대불대학교 전기공학과) ;
  • 홍광준 (조선대학교 물리학과) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 박진성 (조선대학교 재료공학과)
  • Published : 2003.05.01

Abstract

Tin dioxide($_SnO2$) thin films were deposited on alumina substrate by metal-organic chemical vapor deposition (MOCVD) as a function of temperature and time. Thin films were fabricated from di-n-butyltin diacetate as a precursor and oxygen as an oxidation. The microstructure of deposited films was characterized by X-ray diffraction and field emission scanning electron microscopy(FE-SEM). The thickness was linearly increased with deposition time and $SnO_2$structure was found from $375^{\circ}C$ for the deposition time of 32 min. The maximum sensitivity to 500ppm CO gas was observed for the specimens deposited at $375^{\circ}C$ for 2 min at the operating temperature of $350^{\circ}C$. Gas sensitivity to CO increased with decreasing the film thickness. The sensing properties of response time, recovery and sensitivity of CO were changed with variations of substrate temperature and time.

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