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Fabrication of Field Emission Device Using Carbon Nanotubes Synthesized by Thermal Chemical Vapor Deposition

열 화학 기상 증착법을 이용한 탄소 나노 튜브 전계 방출 소자의 제조

  • Yu, W.J. (Department of Materials Engineering, Chungnam National University) ;
  • Cho, Y.S. (Department of Materials Engineering, Chungnam National University) ;
  • Choi, G.S. (Department of Materials Engineering, Chungnam National University) ;
  • Kim, D.J. (Department of Materials Engineering, Chungnam National University) ;
  • Kim, H.Y. (Department of Materials Engineering, Chungnam National University) ;
  • Yoon, S.K. (Department of Materials Engineering, Chungnam National University)
  • 유완준 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실) ;
  • 조유석 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실) ;
  • 최규석 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실) ;
  • 김도진 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실) ;
  • 김효진 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실) ;
  • 윤순길 (충남대학교 공과대학 재료공학과 나노 재료 응용 실험실)
  • Published : 2003.05.01

Abstract

We report a new fabrication process for carbon nanotube field emitters with high performance. The key of the fabrication process is trim-and-leveling the carbon nanotubes grown in trench structures by employing a planarization process, which leads to a uniform distance from the carbon nanotube tip to the electrode. In order to enable this processing, spin-on-glass liquid is applied over the CNTs grown in trench to have them stubborn adhesion among themselves as well as to the substrate. Thus fabricated emitters reveal an extremely stable emission and aging characteristics with a large current density of 40 ㎃/$\textrm{cm}^2$ at 4.5 V/$\mu\textrm{m}$. The field enhancement factor calculated from the F-N plot is $1.83${\times}$10^{5}$ $cm^{-1}$ , which is a very high value and indicates a superior quality of the emitter originating from the nature of open-tip and high stability of the carbon nanotubes obtained new process.

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