Etch Rate of Oxide Grown on Silicon Implanted with Different Ion Implantation Conditions prior to Oxidation

  • Joung, Yang-Hee (Department of Electrical Engineering, Yosu National University) ;
  • Kang, Seong-Jun (Department of Semiconductor and Applied Physics, Yosu National University)
  • Published : 2003.06.01


The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.


dopant;dosage;ion implantation;energy;dilute HF solution


  1. A. Achari, 'Transport mechanism in borophosphosilicate glass passivation', Electronics Manufacturing Technology Symposium (Nineteenth IEEE/CPMT), pp. 195-199, 1996
  2. Ming-Tung Lee, P. Huang, May Chang and YiYueh Chen, 'A study of sub-atomospheric chemical vapor deposition (SACVD) 03-TEOS UGSm BPSG, PSG, and plasma enhanced chemical vapor deposition (PECVD) PSG film as sacrificial layers in a micro-fluid dispenser device', Semiconductor Manufacturing Technology Workshop, pp. 208-211, 2002
  3. Lian jun Liu, Pey, K. L.and Pang dow Foo, 'HF wet etching of oxide after ion implantation', Electron Devices Meeting, IEEE Hong Kong, pp. 17-20, 1996
  4. D. J. Monk, D. S. Soane and R. T. Howe, 'Sacrificial layer $SiO_2$ wet etching for micromachining applications', Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on , 24-27, pp. 647~650, Jun 1991
  5. W. Kern and R. C. Heim, 'Chemical Vapor Deposition of Silicate Glasses for Use with Silicon Devices', J. Electrchem. Soc., vol. 117, pp. 568-573, 1970
  6. D. M. Brown and P. R. Kennicott, 'Glass Source B Diffusion in Si and $SiO_2$', J. Electrochem. Soc., vol. 118, pp. 293-300, 1971